collector-emitter voltage vce 1200 v dc collector current tc=70c, tvj=175c tc=25c,tvj=175c i c , nom ic 320 455 a repetitive peak collector current tp=1msec,tc=80c i crm 600 a total power dissipation tc=25c p tot 850 w gate-emitter peak voltage v ges +/-20 v dc forward diode current i f 400 a repetitive peak forward current tp=1msec i frm 800 a i 2 t value per diode vr=0v, tp=10msec, tvj=125c tvj=150c i 2 t 11000 10500 a 2 sec isolation test voltage rms, 50hz, t=1min v isol 2500 v attributes: -aerospace build standard -high reliability -lightweight -cu and metal matrix base plate versions (pin finned versions available) -aln isolation -trench gate igbts maximum rated values/electrical properties SML300HB12GG collector-emitter saturation voltage ic=300a,vge=15v, tc=25c ic=300a,vge=15v,tc=125c ic=300a,vge=15v,tc=150c v ce(sat) 1.7 2.0 2.15 2.45 v gate threshold voltage ic=6.4ma,vce=vge, tvj=25c vge (th) 5.0 5.8 6.5 v input capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c ies 21.5 nf reverse transfer capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c res 0.98 nf collector emitter cut off current vce=1200v,vge=0v,tvj=25c vce=1200,vge=0v,tvj=125c i ces 0.3 ma ma gate emitter cut off current vce=0v,vge=20v,tvj=25c i ges 400 na
turn on delay time ic=300a, vcc=600v vge=+/-15v,rg=2 ? ,tvj=125c t d,on 280 nsec rise time ic=300a, vcc=600v vge=+/-15v,rg=2 ? ,tvj=125c tr 65 nsec turn off delay time ic=300a, vcc=600v vge=+/-15v,rg=2 ? ,tvj=125c t d , off 630 nsec fall time ic=300a, vcc=600v vge=+/-15v,rg=2 ? , tvj=125c t f 130 nsec turn on energy loss per pulse ic=300a,vce=600v,vge=15v rge=2 ? ,l=30nh tvj=125c e on 35 mj turn off energy loss per pulse ic=300a,vce=600v,vge=15v rge=2 ? ,l=30nh tvj=125c e off 45 mj sc data tp 10sec, vge 15v vcc=360v, tvj=25c vce (max)= vces-l di/dt tvj=150c i sc 2800 2000 a a stray module inductance l ce 18 nh terminal-chip resistance r c 1.0 m ? forward voltage ic=300a,vge=0v, tc=25c ic=300a,vge=0v, tc=125c v f 1.6 1.6 1.8 1.8 v v peak reverse recovery current if=300a, -di/dt=6200a/sec vce=300v,vge=-10v,tvj=125c i rm 375 a recovered charge if=300a, -di/dt=6200a/sec vce=600v,vge=-10v,tvj=125c qr 75 c reverse recovery energy if=300a, -di/dt=6200a/sec vce=600v,vge=-10v,tvj=125c e rec 33 mj diode characteristics
thermal resistance junction to case (mmc) igbt diode r j-c 0.042 0.1 k/w thermal resistance case to heatsink r c-hs 0.045 k/w maximum junction temperature tvj 175 c maximum operating temperature top -55 175 c storage temperature tstg -55 175 c thermal properties min typ max
circuit diagram gal gar
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